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2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097. External dimensions (Unit : mm) 2SB1386 0.50.1 4.5+0.2 -0.1 1.60.1 1.5 +0.2 -0.1 2SB1412 1.50.3 6.50.2 5.1+0.2 -0.1 C0.5 2.3+0.2 -0.1 0.50.1 5.5+0.3 -0.1 (1) (2) (3) 0.40.1 1.50.1 1.00.2 0.4+0.1 -0.05 0.75 0.9 0.650.1 0.40.1 1.50.1 0.50.1 3.00.2 0.550.1 2.30.2 2.30.2 1.00.2 Structure Epitaxial planar type PNP silicon transistor ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter (1) (2) (3) Abbreviated symbol: BH 2.50.2 ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SB1326 6.80.2 0.65Max. 1.0 0.50.1 (1) (2) (3) 2.54 2.54 1.05 0.450.1 ROHM : ATV Denotes hFE 14.50.5 4.40.2 0.9 (1) Emitter (2) Collector (3) Base Rev.A 2.5 1/4 9.50.5 4.00.3 2.5+0.2 -0.1 0.9 1.5 2SB1386 / 2SB1412 / 2SB1326 Transistors Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SB1386 Collector power 2SB1412 dissipation 2SB1326 Junction temperature Storage temperature Tj Tstg PC Symbol VCBO VCEO VEBO IC Limits -30 -20 -6 -5 -10 0.5 2 1 10 1 150 -55 to 150 Unit V V V A(DC) A(Pulse) 1 W W 2 W W(Tc=25C) 3 W C C 1 2 3 Single pulse, Pw=10ms When mounted on a 40x40x0.7 mm ceramic board. Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger. Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Symbol BVCBO Min. -30 -20 -6 - - - 82 120 fT Cob - - Typ. - - - - - 0.35 - - 120 60 Max. - - - -0.5 -0.5 -1.0 390 390 - - Unit V V V IC= -50A IC= -1mA IE= -50A VCB= -20V VEB= -5V IC/IB= -4A/ -0.1A VCE= -2V, IC= -0.5A VCE= -6V, IE=50mA, f=100MHz VCB= -20V, IE=0A, f=1MHz Conditions Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 2SB1386,2SB1412 2SB1326 BVEBO ICBO IEBO VCE(sat) hFE A A V - - MHz pF Transition frequency Output capacitance Measured using pulse current. Packaging specifications and hFE Package Code Type 2SB1386 2SB1412 2SB1326 hFE PQR PQR QR - - - Basic ordering unit (pieces) T100 1000 Taping TL 2500 - TV2 2500 - - hFE values are classified as follows : Item hFE P 82 to 180 Q 120 to 270 R 180 to 390 Rev.A 2/4 2SB1386 / 2SB1412 / 2SB1326 Transistors Electrical characteristic curves -10 -5 VCE= -2V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE -2 -1 -500m -200m -100m -50m -20m -10m -5m -2m -1m Ta=100C 25C -25C -5 -50mA -45mA -40mA -4 -35mA Ta=25C mA -30 A -25m -20mA 5k 2k 1k 500 200 100 50 20 10 Ta=25C -15mA -3 -10mA -2 VCE= -5V -2V -1V -5mA -1 IB=0A 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 5 -1m -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current ( ) VCE= -1V DC CURRENT GAIN : hFE VCE= -2V COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 5k 2k DC CURRENT GAIN : hFE 5k 2k 1k 500 200 100 50 20 10 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 Ta=25C 1k 500 200 100 50 20 10 -1m -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 Ta=100C 25C -25C Ta=100C 25C -25C IC/IB=50/1 40/1 /1 30/1 10/1 5 -5 -10 -1m -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 5 -5 -10 -0.01 -2m -5m -0.0- -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 lC/lB=30 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 lC/lB=40 -25C 25C Ta=100C 25C Ta=100C 25C -25C -25C Ta=100C -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (A) -5 -10 -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (A) -5 -10 -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (A) -5 -10 Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Collector-emitter saturation voltage vs. collector current ( ) Fig.9 Collector-emitter saturation voltage vs. collector current ( ) Rev.A 3/4 2SB1386 / 2SB1412 / 2SB1326 Transistors -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 1 000 TRANSEITION FREQUENCY : fT (MHz) 1000 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=50 -25C 25C Ta=100C 500 200 100 50 20 10 5 2 1 1 2 5 10 20 Ta=25C VCE= -6V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25C f=1MHz IE=0A 200 100 50 20 10 -0.1 -0.2 -0.5 -1 50 100 200 500 1000 -2 -5 -10 -20 -50 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector-emitter saturation voltage vs. collector current ( ) Fig.11 Gain bandwidth product vs. emitter current Fig.12 Collector output capacitance vs. collector-base voltage EMITTER INTPUT CAPACITANCE : Cib (pF) 1000 500 COLLECTOR CURRENT : IC (A) Ta=25C f=1MHz IC=0A 100 50 20 10 Ta=25C Single nonrepetitive pulse Pw 200 100 50 5 2 1 500m 200m 100m 50m 20m 10m DC =1 Pw 0 =1 ms ms 00 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 0.2 0.5 1 2 5 10 20 50 100 200 500 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : -VCE (V) Fig.13 Emitter input capacitance vs. emitter-base voltage Fig.14 Safe operation area F(2SB1412) Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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